AUIRF9Z34N Datasheet - International Rectifier

Power MOSFET

AUIRF9Z34N Features

* l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

* HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. ID D -55V

AUIRF9Z34N General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF9Z34N Datasheet (282.33 KB)