AUIRF9952Q Datasheet - International Rectifier

AUIRF9952Q Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF9952Q Features

* l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

* S1 G1 S2 G2 N-CHANNEL MOS

AUIRF9952Q_InternationalRectifier.pdf