Datasheet Specifications
- Part number
- AUIRF9952Q
- Manufacturer
- International Rectifier
- File Size
- 301.71 KB
- Datasheet
- AUIRF9952Q_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q HEXFET® Power MOSFET .
Features
* l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive QualifiedApplications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremeAUIRF9952Q Distributors
📁 Related Datasheet
📌 All Tags