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AUIRFR5410 Power MOSFET

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Description

AUTOMOTIVE GRADE   AUIRFR5410 .
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to a.

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Features

* Advanced Planar Technology
* P-Channel MOSFET
* Low On-Resistance
* Dynamic dV/dT Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualified

Applications

* this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an

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📌 All Tags

AUIRFR5410 Power MOSFET Infineon
Infineon AUIRFR5410-like datasheet
AUIRFR540Z
AUIRFR5305
AUIRFR5505
AUIRFR120Z
AUIRFR2607Z