AUIRFR5410

Power MOSFET

Infineon

AUIRFR5410 Features

* Advanced Planar Technology

* P-Channel MOSFET

* Low On-Resistance

* Dynamic dV/dT Rating

* 175°C Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Qualified

AUIRFR5410 General Description

Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs .

AUIRFR5410 Datasheet (302.18 KB)