Datasheet4U Logo Datasheet4U.com

AUIRFR9024N Power MOSFET

AUIRFR9024N Description

  AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRFR9024N Features

* Advanced Planar Technology
* Low On-Resistance
* P-Channel
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualified
*   D

AUIRFR9024N Applications

* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

📥 Download Datasheet

Preview of AUIRFR9024N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • AUIRFR024N - Power MOSFET (International Rectifier)
  • AUIRFR1010Z - Power MOSFET (International Rectifier)
  • AUIRFR1018E - Power MOSFET (International Rectifier)
  • AUIRFR2307Z - HEXFET Power MOSFET (International Rectifier)
  • AUIRFR2405 - Power MOSFET (International Rectifier)
  • AUIRFR2407 - Power MOSFET (International Rectifier)
  • AUIRFR3504Z - HEXFET Power MOSFET (International Rectifier)
  • AUIRFR3607 - Advanced Process Technology (International Rectifier)

📌 All Tags

Power MOSFET Infineon
Infineon AUIRFR9024N-like datasheet