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AUIRFU4105Z - Power MOSFET

This page provides the datasheet information for the AUIRFU4105Z, a member of the AUIRFR4105Z Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Datasheet preview – AUIRFU4105Z

Datasheet Details

Part number AUIRFU4105Z
Manufacturer Infineon
File Size 703.97 KB
Description Power MOSFET
Datasheet download datasheet AUIRFU4105Z Datasheet
Additional preview pages of the AUIRFU4105Z datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. VDSS RDS(on) ID AUIRFR4105Z AUIRFU4105Z HEXFET® Power MOSFET 55V max.
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