AUIRLL024N Datasheet - Infineon

AUIRLL024N, Power MOSFET

AUTOMOTIVE GRADE AUIRLL024N

Features

* Advanced Planar Technology
* Low On-Resistance
* Logic Level Gate Drive
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualifie

Applications

* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

AUIRLL024N-Infineon.pdf