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AUIRL7736M2TR

Power MOSFET

AUIRL7736M2TR Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID

AUIRL7736M2TR General Description

The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with .

AUIRL7736M2TR Datasheet (239.82 KB)

Preview of AUIRL7736M2TR PDF

Datasheet Details

Part number:

AUIRL7736M2TR

Manufacturer:

International Rectifier

File Size:

239.82 KB

Description:

Power mosfet.
PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 2.2mΩ max. 3.0mΩ ID (Silicon Limited) 1.

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AUIRL7736M2TR Power MOSFET International Rectifier

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