AUIRL7766M2TR1, AUIRL7766M2TR Datasheet - International Rectifier

AUIRL7766M2TR1 Power MOSFET

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with e.

PD - 97648 AUTOMOTIVE GRADE AUIRL7766M2TR AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET Advanced Process Technology Optimized for Automotive DC-DC and other Heavy Load Applications Logic Level Gate Drive Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliabilit.

AUIRL7766M2TR1 Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Stresses beyond those listed under “Abso

AUIRL7766M2TR-InternationalRectifier.pdf