AUIRL7736M2TR1, AUIRL7736M2TR Datasheet (International Rectifier)

AUIRL7736M2TR1, AUIRL7736M2TR, Power MOSFET

The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

The DirectFET® package is compatible with

PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET® Power MOSFET V(BR)DSS 40V RDS(on) typ.

2.2mΩ max.

3.0mΩ ID (Silicon Limited) 112A Qg 52nC Logic Level Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature

AUIRL7736M2TR1 Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID