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AUIRLR120N Key Features

  • Advanced Planar Technology
  • Logic Level Gate Drive
  • Low On-Resistance
  • Dynamic dV/dT Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS pliant
  • Automotive Qualified

Other AUIRLR120N Datasheets

Manufacturer Part Number Description
International Rectifier Logo International Rectifier AUIRLR120N Power MOSFET

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AUIRLR120N Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide...