AUIRLR120N Datasheet - Infineon

AUIRLR120N Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLR120N Features

* Advanced Planar Technology

* Logic Level Gate Drive

* Low On-Resistance

* Dynamic dV/dT Rating

* 175°C Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Qualifie

AUIRLR120N-Infineon.pdf