BSB028N06NN3G n-Channel Power MOSFET

Infineon

Description

BSB028N06NN3 G OptiMOS™3 Power-MOSFET .

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Datasheet Specifications

Part number: BSB028N06NN3G
Manufacturer: Infineon ↗
File Size: 724.47 KB
Datasheet: BSB028N06NN3G_Infineon.pdf
Description: n-Channel Power MOSFET

Features

* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Superior thermal resistance
* Dual sided cooling
* low parasitic inductance Product Summary VDS RDS(on),max ID 60 2.8 90 CanPAKTM M MG-WDSON-2
* Low prof

Applications

* Compatible with DirectFET® package MN footprint and outline2) V mW A Type BSB028N06NN3 G Package MG-WDSON-2 Outline MN Marking 0106 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D V GS=10 V, T C=25 °C 90

BSB028N06NN3G Distributors

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BSB028N06NN3G n-Channel Power MOSFET Infineon

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