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BSC0511NDI MOSFET

BSC0511NDI Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 25V 25V OptiMOS™5 Power MOSFET BSC0511NDI Data Sheet Rev.2.0 Fina.

BSC0511NDI Features

* Product Summary
* Dual N-channel OptiMOS™ MOSFET
* Optimized for high performance buck converters
* Logic level (4.5V rated) VDS RDS(on),max
* 100% avalanche tested ID

BSC0511NDI Applications

* VGS=10 V VGS=4.5 V
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 VPhase
* Integrated monolithic Schottky-like diode BSC0511NDI Q1 Q2 25 25 V 2.8 1.0 mW 4.2 1.4 40 40 A Type BSC0511NDI Package PG-TISON-8 Marking 0511NDI Maximum rati

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