BSC014N06NS Power-Transistor

Infineon Technologies

Description

Public BSC014N06NS Final datasheet MOSFET OptiMOS™ Power‑Transistor, 60 V .
1 Maxi.

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Datasheet Specifications

Part number: BSC014N06NS
Manufacturer: Infineon ↗ Technologies
File Size: 1.44 MB
Datasheet: BSC014N06NS-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* Optimized for high performance SMPS, e. g. sync. rec.
* 175°C rated
* 100% avalanche tested
* Superior thermal resistance
* N‑channel
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21
* Higher solder join

Applications

* Table 1 Parameter VDS RDS(on),max ID QOSS QG(0V. .10V) Key Performance Parameters Value Unit 60 V 1.45 mΩ 257 A 100 nC 89 nC PG‑TDSON‑8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type/Ordering Code BSC014N06N

BSC014N06NS Distributors

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BSC014N06NS Power-Transistor Infineon Technologies

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