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D3065C5 SiC Schottky Barrier diodes

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Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW30G65C5 Final Datasheet Rev.2.2, 2013-01-15 Power Management & Multimark.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

Applications

* Breakdown voltage tested at 66 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher s

D3065C5 Distributors

📁 Related Datasheet

D30-11 D30-11B D30-12 D30-13 D30-14 D30-15

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D3065C5 SiC Schottky Barrier diodes Infineon
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