ESD103-B1-02 - Bi-directional Femto Farad Capacitance TVS Diode
Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) Pin 1 TSLP -2 Pin 2 Figure 1 TSSLP - 2 a) Pin configuration Pin configuration and Schematic diagram Pin 2 b) Schematic diagram Table 1 Ordering Information Type Package ESD103-B1-02ELS TSSLP-2-4 ESD103-B1-02EL TSLP-2-20 Configuration 1 line, b
TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.3, 2014-06-12 Final Power Management & Multimarket Edition 2014-06-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.
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With respect
ESD103-B1-02 Features
* ESD/Transient protection of RF and ultra-high speed signal lines according to:
* IEC61000-4-2: ±10 kV (contact)
* Extremely low capacitance CL = 0.09 pF (typical) at f = 1 GHz
* Maximum working voltage: VRWM = ±15 V
* Very low reverse current: IR < 0.1 nA (t
