ESD103-B1-02 Bi-directional Femto Farad Capacitance TVS Diode

Infineon

Description

TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Dat.
Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) Pin 1 TSLP -2 Pin 2 Figure 1 TSSLP - 2 a) Pin configuration Pin configuration and Schematic diagram.

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Datasheet Specifications

Part number: ESD103-B1-02
Manufacturer: Infineon ↗
File Size: 392.99 KB
Datasheet: ESD103-B1-02-Infineon.pdf
Description: Bi-directional Femto Farad Capacitance TVS Diode

Features

* ESD/Transient protection of RF and ultra-high speed signal lines according to:
* IEC61000-4-2: ±10 kV (contact)
* Extremely low capacitance CL = 0.09 pF (typical) at f = 1 GHz
* Maximum working voltage: VRWM = ±15 V
* Very low reverse current: IR < 0.1 nA (t

Applications

* Tailored for connectivity applications
* WLAN, GPS antenna, DVB T/H, Bluetooth Class 1 and 2

ESD103-B1-02 Distributors

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ESD103-B1-02 Bi-directional Femto Farad Capacitance TVS Diode Infineon

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