FM25V20A Datasheet - Infineon

F-RAM

FM25V20A Features

* 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 - High-endurance 10 trillion (1014) read/writes - 121-year data retention (See the Data retention and endurance table) - No delay writes - Advanced high-reliability ferroelectric process

* Very fast

FM25V20A General Description

The FM25V20A is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and sy.

FM25V20A Datasheet (907.29 KB)