Datasheet4U Logo Datasheet4U.com

FP15R12W1T4_B11 - IGBT

📥 Download Datasheet

Datasheet preview – FP15R12W1T4_B11

Datasheet Details

Part number FP15R12W1T4_B11
Manufacturer Infineon
File Size 626.88 KB
Description IGBT
Datasheet download datasheet FP15R12W1T4_B11 Datasheet
Additional preview pages of the FP15R12W1T4_B11 datasheet.

📁 Similar Datasheet

  • FP15R12W1T4 - IGBT (Infineon Technologies)
  • FP15R12KE3 - IGBT-Module (eupec GmbH)
  • FP15R12KE3G - IGBT-Module (eupec GmbH)
  • FP15R12KS4C - IGBT (eupec)
  • FP15R12KT3 - IGBT-Module (eupec GmbH)
  • FP15R06KL4 - Elektrische Eigenschaften / Electrical properties (ETC)
  • FP150F - (FP125F - FP175F) Rectifier Stacks (VMI)
  • FP150S - Rectifier Stacks (Voltage Multipliers)
  • FP1510SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT (Filtronic Compound Semiconductors)
  • FP1527 - OTP Encoder (Silvan)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP15R12W1T4_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VorläufigeDaten PreliminaryData VCES  IC nom IC  ICRM  Ptot  VGES  1200 15 28 30 130 +/-20 V  A A A W V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collec
Published: |