FP30R06W1E3_B11 Datasheet - Infineon

FP30R06W1E3_B11 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules FP30R06W1E3_B11 EasyPIM™ Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorläufige Daten / Preliminary Data VCES = 600V IC nom = 30A / ICRM = 60A Typische Anwendungen Hilfsumrichter Klimaanlagen Motorantriebe Elektrische Eigenschaften Niedrige Schaltver.

FP30R06W1E3_B11 Features

* Low Switching Losses

* Low VCEsat

* Trench IGBT 3

* VCEsat with positive Temperature Coefficient Mechanical Features

* Al2O3 Substrate with Low Thermal Resistance

* Compact design

* PressFIT Contact Technology

* Rugged mounting due t

FP30R06W1E3_B11-Infineon.pdf