* High DC stability
* High dynamic robustness
* High short-circuit capability
* Low VCEsat
* Trench IGBT 3
* VCEsat with positive temperature coefficient Mechanical Features
* AlSiC base plate for increased thermal cycling capability
FZ1200R45KL3_B5 Datasheet (497.72 KB)
FZ1200R45KL3_B5
497.72 KB
Igbt.
FZ1200R45KL3_B5
hochisolierendes Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode highly insulated module with Trench/Fieldstop IGBT3 a.
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