HYR1812840G-845 Datasheet - Infineon

HYR1812840G-845 Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)

Signal GND Module Connector Pads A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B6.

HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed.

HYR1812840G-845 Features

* High speed 800, 711 & 600 MHz RDRAM storage

* 184 edge connector pads with 1 mm pad spacing

* Maximum module PCB size: 133.5 mm × 31.75 mm × 1.37 mm (5.25” × 1.25” × 0.05”)

* Each RDRAM has 32 banks, for a total of 512, 256,128 or 64 banks on each 512/ 576 MB, 256/2

HYR1812840G-845 Datasheet (385.31 KB)