HYS64V64220GBDL-8-D - 144 pin SO-DIMM SDRAM Modules
in this drawing, however DQ/DQMB/CKE/CS relationship is maintained as shown.
2.
In this design each of the D0 - D7 components are represented by two 32M x 8 chips.
These two chips effectively work as a single 32M x 16 device.
3.
All resistors are 10 Ohm.
Block Diagram for two bank 64M x 64 SDRAM DI
144 pin SO-DIMM SDRAM Modules HYS64V64220GBDL-7/7.5/8-D 512 MB PC100 / PC133 u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications Two bank 64M x 64 non-parity module organisation suitable for use in PC100 and PC133 applications Performance: -7 PC133 2-2-2 fCK tAC Clock frequency (max.) Clock access time CAS latency = 2 & 3 133 5.4 -7.5 PC133 3-3-3 133 5.4 -8 PC100 2-2-2 100 6 Units MHz ns
HYS64V64220GBDL-8-D Features
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* 20 20
* ns ns 5 5 Infineon Technologies 7 2002-08-06 HYS64V64220GBDL-7/7.5/8-D 144 pin SO-DIMM SDRAM Modules AC Characteristics 9)10) TA = 0 to 70 oC; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V, tT = 1 ns TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns Pa
