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IDC51D120T6M Diode

IDC51D120T6M Description

IDC51D120T6M Diode EMCON 4 Medium Power Chip .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/PrĂ¼.

IDC51D120T6M Features

* 1200V EMCON 4 technology
* soft, fast switching This chip is used for:
* low / medium power modules A
* low reverse recovery charge

IDC51D120T6M Applications

* low / medium power drives Chip Type VR IF IDC51D120T6M 1200V 100A Die Size 7.00 x 7.30 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Ba

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Infineon IDC51D120T6M-like datasheet