IDH12G65C5 Datasheet - Infineon

IDH12G65C5 Silicon Carbide Diode

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products sho.

IDH12G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Tempe

IDH12G65C5 Datasheet (1.14 MB)