IDH16G120C5 - Diode

Infineon

IDH16G120C5 Datasheet Preview — Preview of IDH16G120C5 PDF

Datasheet Details

Part number	IDH16G120C5
Manufacturer	Infineon ↗
File Size	893.50 KB
Description	Diode
Datasheet	IDH16G120C5-Infineon.pdf

IDH16G120C5 Product details

Description

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 6 Package Drawings 9 Revision History 10 Disclaimer 11 Final Datasheet 3 Rev.2.1, 2017-07-21 Maximum ratings Parameter Repetitive peak reverse voltage Continues forward current for Rth(j-c,max) TC = 145°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / No forward recovery.
Temperature independent switching behavior.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance.
Extended surge current capability.
Specified dv/dt ruggedness.
Qualified according to JEDEC1) for target.

📁 IDH16G120C5 Similar Datasheet

IDH16S60C - Schottky Diode (Infineon Technologies)
IDH10S120 - Schottky Diode (Infineon Technologies)
IDH10S60C - Schottky Diode (Infineon Technologies)
IDH10SG60C - Schottky Diode (Infineon Technologies)
IDH12S60C - Schottky Diode (Infineon Technologies)
IDH12SG60C - Schottky Diode (Infineon Technologies)
IDH15S120 - Schottky Diode (Infineon Technologies)
IDH-20PK1-Sx - 4 Sided .025 sq. Post Headers (RN)

Other Datasheets by Infineon

IDH16G65C5 - 650V SiC Schottky Diode
IDH16G65C6 - 650V SiC Schottky Diode
IDH10G120C5 - Silicon Carbide Schottky Diode
IDH10G65C5 - Silicon Carbide Diode
IDH10G65C6 - SiC Schottky Diode
IDH12G65C5 - Silicon Carbide Diode

Published: Feb 25, 2016 |