IDK08G120C5 Datasheet (Infineon) - 1200V Schottky Diode

IDK08G120C5, 1200V Schottky Diode

* System efficiency improvement over Si diodes * Enabling higher frequency / increased power density solutions * System size/cost savings due to reduced heatsink requirements and smaller magnetics * Reduced EMI * Highest efficiency across the entire load range * Robust diode

IDK08G120C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* No reverse recovery current / no forward recovery

* Temperature independent switching behaviour

* Low forward voltage even at high operating temperature

* Tight forward voltage distribution

* Excellent thermal per