IDK08G120C5 - 1200V Schottky Diode

Infineon

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Datasheet Details

Part number	IDK08G120C5
Manufacturer	Infineon
File Size	1.01 MB
Description	1200V Schottky Diode
Datasheet	IDK08G120C5-Infineon.pdf

IDK08G120C5 Product details

Description

System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDK08G120C5 VDC IF 1200 V 8 A QC 28nC Tvj,max 175°C Marking

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / no forward recovery.
Temperature independent switching behaviour.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance 1 2.
Extended surge current capability.
Specified dv/dt ruggedness.
Pb-free lead plating; RoHS compliant Potential.

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Published: Jul 2, 2020 |