IDK08G65C5 Datasheet - Infineon

Silicon Carbide Diode

IDK08G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Temperature independent switching behavior

* High surge current capability

* Pb-free lead plating; RoHS compliant

* Qualified according to

IDK08G65C5 General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products .

IDK08G65C5 Datasheet (580.02 KB)

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Datasheet Details

Part number:

IDK08G65C5

Manufacturer:

Infineon ↗

File Size:

580.02 KB

Description:

Silicon carbide diode.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimar.

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IDK08G65C5 Silicon Carbide Diode Infineon

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IDK08G65C5 Features

IDK08G65C5 General Description

Datasheet Details

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Description:

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