* High speed F5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* 650V breakdown voltage
* Low gate charge QG
* Ideal fit with SIC Schottky Diode in boost converters
* Maximum junction temperature 175°C
* Qualif
IGP40N65F5 Datasheet (2.20 MB)
IGP40N65F5
2.20 MB
Igbt.
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGP40N65F5, IGW40N65F5 650V IGBT high speed switching series fifth generation Data sheet Ind.
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