IGW75N65H5

IGBT

Infineon

IGW75N65H5 Features

* High speed H5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* Plug and play replacement of previous generation IGBTs

* 650V breakdown voltage

* Low QG

* Maximum junction temperature 175°C

* Qualified accordin

IGW75N65H5 General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 .

IGW75N65H5 Datasheet (1.72 MB)