IMBG120R078M2H
IMBG120R078M2H is 1200V SiC MOSFET manufactured by Infineon.
Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 21 A at TC = 100°C
- RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
2021-10-27 restricted
- Suitable Infineon gate drivers can be found under https://.infineon./gdfinder
Copyright © Infineon Technologies AG 2021. All rights reserved.
Potential applications
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- General purpose drives (GPD)
Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
Pin definition:
- Pin 1
- Gate
- Pin 2
- Kelvin sense contact
- Pin 3…7
- Source
- Tab
- Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L )
Type IMBG120R078M2H
Package PG-TO263-7-U01
Marking 12M2H078
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.30 2024-11-08
Cool Si C™ 1200 V Si C MOSFET G2
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