Datasheet4U.com - IMBG120R078M2H

IMBG120R078M2H Datasheet, mosfet equivalent, Infineon

Page 1 of IMBG120R078M2H Page 2 of IMBG120R078M2H Page 3 of IMBG120R078M2H
  • Preview is limited to a maximum of three pages.

PDF File Details

Part number: IMBG120R078M2H

Manufacturer: Infineon (https://www.infineon.com/)

File Size: 1.27MB

Download: 📄 Datasheet

Description: 1200V SiC MOSFET

📥 Download PDF (1.27MB) Datasheet Preview: IMBG120R078M2H

PDF File Details

Part number: IMBG120R078M2H

Manufacturer: Infineon (https://www.infineon.com/)

File Size: 1.27MB

Download: 📄 Datasheet

Description: 1200V SiC MOSFET

IMBG120R078M2H Features and benefits


* VDSS = 1200 V at Tvj = 25°C
* IDDC = 21 A at TC = 100°C
* RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload opera.

IMBG120R078M2H Application


* EV-Charging
* Online UPS/Industrial UPS
* Solar power optimizer
* String inverter
* General purpos.

IMBG120R078M2H Description

Pin definition:
* Pin 1 - Gate
* Pin 2 - Kelvin sense contact
* Pin 3…7 - Source
* Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R078.

Image gallery

Page 1 of IMBG120R078M2H Page 2 of IMBG120R078M2H Page 3 of IMBG120R078M2H

TAGS

IMBG120R078M2H
1200V
SiC
MOSFET
Infineon

📁 Related Datasheet

IMBG120R008M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R012M2H - 1200V SiC MOSFET (Infineon)
IMBG120R012M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R017M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R017M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R026M2H - 1200V SiC MOSFET (Infineon)
IMBG120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R045M1H - 1200V SiC Trench MOSFET (Infineon)
IMBG120R045M1H IMBG120R045M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features • Very low switching losses • Short circu.

IMBG120R053M2H - 1200V SiC MOSFET (Infineon)
IMBG120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R234M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R234M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG40R011M2H - G2 MOSFET (Infineon)
Public IMBG40R011M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • .

IMBG40R015M2H - MOSFET (Infineon)
Public IMBG40R015M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • .

IMBG40R025M2H - G2 MOSFET (Infineon)
Public IMBG40R025M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts