IMBG120R008M2H Description
Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2024-07-01 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Table of contents Table of contents Description.
IMBG120R008M2H Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 144 A at TC = 100°C
- RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance