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IMBG120R030M1H - 1200V SiC Trench MOSFET

Product Overview

Infineon

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IMBG120R030M1H 1200V SiC Trench MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMBG120R030M1H

Datasheet Details

Part number	IMBG120R030M1H
Manufacturer	Infineon
File Size	1.23 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMBG120R030M1H Datasheet
Additional preview pages of the IMBG120R030M1H datasheet.

Product details

Features

Very low switching losses.
Short circuit withstand time 3 µs.
Fully controllable dV/dt.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
Robust against parasitic turn on, 0V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance.
Package creepage and clearance distance > 6.1mm.
Sense pin for optimized switching performance Benefits.
Efficiency improvemen.

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Published: May 18, 2025 |