IMBG120R030M1H Datasheet | Infineon

Features - Very low switching losses - Short circuit withstand time 3 µs - Fully controllable d V/dt - Benchmark gate threshold voltage, VGS(th) = 4.5V - Robust against parasitic turn on, 0V turn-off gate voltage can be applied - Robust body diode for hard mutation - .XT interconnection technology for best-in-class thermal performance - Package creepage and clearance distance > 6.1mm - Sense pin for optimized switching performance Benefits - Efficiency improvement - Enabling higher frequency - Increased power density - Cooling effort reduction - Reduction of system plexity and cost Potential applications - Drives - Infrastructure - Charger - Energy generation - Solar string inverter and solar optimizer - Industrial power supplies - Industrial UPS Gate pin 1 Sense pin 2 Drain TAB Source pin 3...7 Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type IMBG120R030M1H 1200V TC = 25°C, Rth(j-c,max) 56A RDS(on...