IPB040N08NF2S
1.13MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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📁 Related Datasheet
IPB041N04N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB041N04N - Power Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.
IPB041N04NG - Power-Transistor
(Infineon Technologies)
Type
#$% &™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.
IPB042N03L - Power-Transistor
(Infineon)
Je]R
%&$ #F %
IPB042N03LG - Power-Transistor
(Infineon Technologies)
Je]R
%&$ #F %
IPB042N10N3G - MOSFET
(Infineon Technologies)
IPB042N10N3 G
MOSFET
OptiMOSª3 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low .
IPB042N10N3G - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to .
IPB043N10NF2S - MOSFET
(Infineon)
IPB043N10NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
IPB044N15N5 - MOSFET
(Infineon)
IPB044N15N5
MOSFET
OptiMOSª5 Power-Transistor, 150 V
Features
Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(.
IPB048N06L - Power-Transistor
(Infineon Technologies)
..
IPP048N06L G
IPB048N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channe.