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IPB042N10N3, IPB042N10N3G - 100V MOSFET

Infineon

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IPB042N10N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IPB042N10N3, IPB042N10N3G. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number: IPB042N10N3, IPB042N10N3G
Manufacturer: Infineon ↗
File Size: 976.51 KB
Datasheet: IPB042N10N3G-InfineonTechnologies.pdf
Description: 100V MOSFET
Note: This datasheet PDF includes multiple part numbers: IPB042N10N3, IPB042N10N3G.
Please refer to the document for exact specifications by model.

IPB042N10N3 Product details

Description

. . .

Features

N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target application.
Ideal for high-frequency switching and synchronous rectification.
Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 4.

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