* N-channel, normal level
* Fast Diode with reduced Qrr
* Optimized for hard commutation ruggedness
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for tar
IPB407N30N Datasheet (1.08 MB)
IPB407N30N
1.08 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 300 V IPB407N30N
Data Sheet
Rev. 2.0 Final
Power Manage.
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IPB407N30N N-Channel MOSFET (INCHANGE)
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