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IPB010N06N MOSFET

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Description

IPB010N06N MOSFET OptiMOSTM Power-Transistor, 60 V .

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Features

* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 1.0 mΩ ID 180 A Qoss 228 nC QG(0V. .10V) 208 nC D²-PAK 7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source

IPB010N06N Distributors

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