Description
Type IPB016N06L3 G OptiMOS™3 Power-Transistor .
Features
* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, logic level
* 100% avalanche tested
* Pb-free pla
Applications
* Halogen-free according to IEC61249-2-21
Type
IPB016N06L3 G
Product Summary V DS R DS(on),max ID
60 V 1.6 mΩ 180 A
Package Marking
PG-TO-263-7 016N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
