IPB015N08N5 MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS™ 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev.2.1 Final Power Mana.
Features. Ideal for high frequency switching and sync. Optimized technology for DC/DC converters. Excellent gate char.

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Datasheet Specifications

Part number: IPB015N08N5
Manufacturer: Infineon ↗
File Size: 1.19 MB
Datasheet: IPB015N08N5-Infineon.pdf
Description: MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free platin

Applications

* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 1.5 mΩ ID 180 A Qoss 207 nC QG(0V. .10V) 178 nC OptiMOSª 5 Power-Transistor, 80 V IPB015N08N5 D²-PAK 7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source

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