Datasheet Details
- Part number
- IPB015N08N5
- Manufacturer
- Infineon ↗
- File Size
- 1.19 MB
- Datasheet
- IPB015N08N5-Infineon.pdf
- Description
- MOSFET
IPB015N08N5 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS™ 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev.2.1 Final Power Mana.
Features.
Ideal for high frequency switching and sync.
Optimized technology for DC/DC converters.
Excellent gate char.
IPB015N08N5 Features
* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free platin
IPB015N08N5 Applications
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
1.5
mΩ
ID 180 A
Qoss 207 nC
QG(0V. .10V)
178
nC
OptiMOSª 5 Power-Transistor, 80 V IPB015N08N5
D²-PAK 7pin
1 7
tab
Drain Pin 4, tab
Gate Pin 1
Source
📁 Related Datasheet
📌 All Tags