IPB015N04L Datasheet, Mosfet, INCHANGE

IPB015N04L Features

• Mosfet
• With TO-263( D2PAK ) packaging
• High speed switching
• Low gate input resistance
• Standard level gate drive
• Easy to use
• 100% avalanche

PDF File Details

Part number:

IPB015N04L

Manufacturer:

INCHANGE

File Size:

247.79kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPB015N04L Application

• Applications
• Power supply
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain

TAGS

IPB015N04L

INCHANGE

📁 Related Datasheet

IPB015N04L - Power Transistor (Infineon)
Jg_T %&$ #E  $ ;B 1='=-: >5>?;= 6MI[\YMZ S 4EFEI

IPB015N04LG - Power Transistor (Infineon Technologies)
Jg_T $     %&$ #E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ S 4E FE I< F 6;< A: ' ) - . 9 BD- ' * S) C F < @< L 87 F 86;AB?B: K 9 BD .

IPB015N04N - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB015N04N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.

IPB015N04N - Power Transistor (Infineon)
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.

IPB015N04NG - Power Transistor (Infineon Technologies)
Type IPP015N04N G IPB015N04N G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qu.

IPB015N06NF2S - MOSFET (Infineon)
IPB015N06NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.

IPB015N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS™ 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.1 Final Power Mana.

IPB010N06N - MOSFET (Infineon)
IPB010N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.

IPB011N04L - Power Transistor (Infineon)
Jf^S %&$ #E  $ ;B 1='=-: >5>?;= 6MI[\YMZ R' ) - . 8AC) , ;@9 3 @6 / @;@E7CCFBE;4>7 * AH7C- FBB>J R+ F3 >;8;76 3 55AC6;@9 EA $ )# 8ACE3 C.

IPB011N04LG - Power Transistor (Infineon Technologies)
Jf^S $      %&$ #E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ R' ) - . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ;.