INCHANGE manufacturer logo and representative part image Part number: IPB019N06L3 Manufacturer: INCHANGE File Size: 248.62kb Download: 📄 Datasheet Description: N-channel mosfet.
IPB019N06L3 - Power Transistor (Infineon) Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC conve.
IPB019N06L3G - Power Transistor (Infineon Technologies) Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converte.
IPB019N08N3 - Power Transistor (Infineon) # %&$ #D # : A 0<& <,9=4=>: < 6LHZ[XLY Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>?
IPB019N08N3G - Power Transistor (Infineon Technologies) # %&$ #D # : A 0< & < ,9=4 => :< 6LHZ[XLY Q #451<6 ?B 89 78 6 B 5AE5>3 I C G9 D 3 89 >7 1>4 C I>3 B 53 Q ( @D 9 =9 J54 .
IPB010N06N - MOSFET (Infineon) IPB010N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.
IPB011N04L - Power Transistor (Infineon) Jf^S %&$ #E $ ;B 1='=-: >5>?;= 6MI[\YMZ R' ) - . 8AC) , ;@9 3 @6 / @;@E7CCFBE;4>7 * AH7C- FBB>J R+ F3 >;8;76 3 55AC6;@9 EA $ )# 8ACE3 C.
IPB011N04LG - Power Transistor (Infineon Technologies) Jf^S $ %&$ #E $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ R' ) - . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ;.
IPB011N04NF2S - MOSFET (Infineon) IPB011N04NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.
IPB011N04NG - OptiMOS3 Power Transistor (Infineon Technologies) Ie]R # %&$ #D # : A 0< & < ,9=4 => :< 6LHZ[XLY Q& ( , - 7 @B ( + :? 8 2 ? 5 . ? :? D 6B B EAD :3 = 6 ) @G6B , EAA= I Q * E.
IPB014N06N - Power Transistor (Infineon Technologies) Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel,.
