IPB019N06L3G Power Transistor

Infineon Technologies

Description

Type IPB019N06L3 G OptiMOS™3 Power-Transistor .

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Datasheet Specifications

Part number: IPB019N06L3G
Manufacturer: Infineon ↗ Technologies
File Size: 289.29 KB
Datasheet: IPB019N06L3G_InfineonTechnologies.pdf
Description: Power Transistor

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, logic level
* 100% avalanche tested
* Pb-free plating

Applications

* Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G Product Summary V DS R DS(on),max ID 60 1.9 120 V mΩ A Package Marking PG-TO-263-3 019N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C

IPB019N06L3G Distributors

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Power Transistor Infineon Technologies

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