IPB019N08N3
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Power transistor.
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IPB019N08N3G - Power Transistor
(Infineon Technologies)
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IPB019N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB019N06L3 - Power Transistor
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IPB019N06L3 G
OptiMOS™3 Power-Transistor
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• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC conve.
IPB019N06L3G - Power Transistor
(Infineon Technologies)
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IPB019N06L3 G
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converte.
IPB010N06N - MOSFET
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OptiMOSTM Power-Transistor, 60 V
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• Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.
IPB011N04L - Power Transistor
(Infineon)
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IPB011N04LG - Power Transistor
(Infineon Technologies)
Jf^S
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6MI[\YMZ R' ) - . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ;.
IPB011N04NF2S - MOSFET
(Infineon)
IPB011N04NF2S
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StrongIRFETTM2 Power-Transistor
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• Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.
IPB011N04NG - OptiMOS3 Power Transistor
(Infineon Technologies)
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6LHZ[XLY Q& ( , - 7 @B ( + :? 8 2 ? 5 . ? :? D 6B B EAD :3 = 6 ) @G6B , EAA= I Q * E.
IPB014N06N - Power Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for synchronous rectification • 100% avalanche tested
• Superior thermal resistance • N-channel,.
