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IPB021N06N3G - N-Channel MOSFET

IPB021N06N3G Description

Isc N-Channel MOSFET Transistor *.

IPB021N06N3G Features

* With TO-263( D²PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB021N06N3G Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature -55~175 Tstg

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Datasheet Details

Part number
IPB021N06N3G
Manufacturer
INCHANGE
File Size
225.07 KB
Datasheet
IPB021N06N3G-INCHANGE.pdf
Description
N-Channel MOSFET

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