Part number:
IPB021N06N3G
Manufacturer:
INCHANGE
File Size:
225.07 KB
Description:
N-channel mosfet.
IPB021N06N3G Datasheet (225.07 KB)
* With TO-263( D²PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Power supply
* Sw
IPB021N06N3G Datasheet (225.07 KB)
IPB021N06N3G
INCHANGE
225.07 KB
N-channel mosfet.
📁 Related Datasheet
IPB021N06N3 - Power Transistor
(Infineon)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q .
IPB021N06N3G - Power-Transistor
(Infineon Technologies)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q .
IPB021N10NM5LF2 - 100V Linear FET
(Infineon)
Public
IPB021N10NM5LF2 Final datasheet
MOSFET
OptiMOS™ 5 Linear FET 2, 100 V
Features
• Ideal for hot‑swap and e‑fuse applications • Very low on‑res.
IPB020N08N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5
Data Sheet
Rev. 2.0 Final
Power Manag.
IPB020N10N5 - MOSFET
(Infineon)
IPB020N10N5
MOSFET
OptiMOSª5 Power-Transistor, 100 V
Features
• N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175.
IPB020N10N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to .
IPB020N10N5LF - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB020N10N5LF
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.
IPB020N10N5LF - MOSFET
(Infineon)
IPB020N10N5LF
MOSFET
OptiMOSTM 5 Linear FET, 100 V
Features
• Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf.
