IPB020N10N5 Datasheet, Mosfet, Infineon

IPB020N10N5 Features

• Mosfet
• N-channel, normal level
• Optimized for FOMOSS
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS com

PDF File Details

Part number:

IPB020N10N5

Manufacturer:

Infineon ↗

File Size:

0.97MB

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TAGS

IPB020N10N5

Infineon

📁 Related Datasheet

IPB020N10N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to .

IPB020N10N5LF - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB020N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.

IPB020N10N5LF - MOSFET (Infineon)
IPB020N10N5LF MOSFET OptiMOSTM 5 Linear FET, 100 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf.

IPB020N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5 Data Sheet Rev. 2.0 Final Power Manag.

IPB021N06N3 - Power Transistor (Infineon)
Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .

IPB021N06N3G - Power-Transistor (Infineon Technologies)
Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .

IPB021N06N3G - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.

IPB022N12NM6 - MOSFET (Infineon)
IPB022N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.

IPB023N04N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IPB023N04N - Power Transistor (Infineon)
Ie]R %&$ #™3 Power-Transistor Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD.