Datasheet Details
- Part number
- IPB027N10N3
- Manufacturer
- INCHANGE
- File Size
- 253.89 KB
- Datasheet
- IPB027N10N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPB027N10N3 Description
Isc N-Channel MOSFET Transistor IPB027N10N3 *.
IPB027N10N3 Features
* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPB027N10N3 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20 120 480
PD
Total Dissipation @TC=25℃
300
Tch
Max. Operating Jun
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