IPB020N08N5, Infineon
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5
Data Sheet
Rev. 2.0 Final
Power Manag.
IPB020N10N5, Infineon
IPB020N10N5
MOSFET
OptiMOSª5 Power-Transistor, 100 V
Features
• N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175.
IPB020N10N5LF, Infineon
IPB020N10N5LF
MOSFET
OptiMOSTM 5 Linear FET, 100 V
Features
• Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf.