Datasheet Details
- Part number
- IPB022N12NM6
- Manufacturer
- Infineon ↗
- File Size
- 1.12 MB
- Datasheet
- IPB022N12NM6-Infineon.pdf
- Description
- MOSFET
IPB022N12NM6 Description
IPB022N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .
IPB022N12NM6 Features
* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit
IPB022N12NM6 Applications
* Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
2.2
mΩ
ID
167
A
Qoss
267
nC
QG (0V10V)
113
nC
Qrr (1000A/µs)
418.2
nC
D²PAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type / Ordering Code IPB022N12NM6
Package PG-TO263-3
Marking
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