IPB022N12NM6 MOSFET

Infineon

Description

IPB022N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .

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Datasheet Specifications

Part number: IPB022N12NM6
Manufacturer: Infineon ↗
File Size: 1.12 MB
Datasheet: IPB022N12NM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 2.2 mΩ ID 167 A Qoss 267 nC QG (0V10V) 113 nC Qrr (1000A/µs) 418.2 nC D²PAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type / Ordering Code IPB022N12NM6 Package PG-TO263-3 Marking

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IPB022N12NM6 MOSFET Infineon

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