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IPB026N06N - N-Channel MOSFET

IPB026N06N Description

isc N-Channel MOSFET Transistor *.

IPB026N06N Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB026N06N Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 100 400 PD Total Dissipation 136 Tj Operating

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Datasheet Details

Part number
IPB026N06N
Manufacturer
INCHANGE
File Size
253.19 KB
Datasheet
IPB026N06N-INCHANGE.pdf
Description
N-Channel MOSFET

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