Datasheet Details
- Part number
- IPB026N06N
- Manufacturer
- INCHANGE
- File Size
- 253.19 KB
- Datasheet
- IPB026N06N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPB026N06N Description
isc N-Channel MOSFET Transistor *.
IPB026N06N Features
* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPB026N06N Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous;Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
±20 100 400
PD
Total Dissipation
136
Tj
Operating
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