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IPB022N12NM6 - MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • High avalanche energy rating.
  • 175°C operating temperature.
  • Optimized for high frequency switching and synchronous rectification.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • MSL 1 classified according to J-STD-020 Product validati.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPB022N12NM6 MOSFET OptiMOSTM6Power-Transistor,120V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 2.2 mΩ ID 167 A Qoss 267 nC QG(0V...10V) 113 nC Qrr(1000A/µs) 418.