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IPB021N10NM5LF2 Final datasheet
MOSFET
OptiMOS™ 5 Linear FET 2, 100 V
Features
• Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2.1
mΩ
ID
176
A
Ipulse (VDS=56 V, tp=10 ms) 10.7
A
D²PAK
tab
2 1
3
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Part number IPB021N10NM5LF2
Package PG‑TO263‑3
Marking 21N10LF2
Related links ‑
Datasheet
https://www.infineon.com
1
Revision 1.
IPB021N10NM5LF2 Datasheet
