IPB020N08N5 - MOSFET

Infineon

Key Features

Ideal for high frequency switching and sync. rec.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

IPB020N08N5 mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPB020N08N5
Manufacturer	Infineon
File Size	1.10 MB
Description	MOSFET
Datasheet	IPB020N08N5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPB020N08N5 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.0 mΩ ID 120 A Qoss 156 nC QG(0V..